Sitemap
Larry D. Hartsough, Ph.D., UA Associates
- thin film failure analysis and process changes to correct cause
- technical response to RFQ for plasma processing equipment
- design & model magnetic confinement of glow discharges for sputtering and etching
- review technical literature on electrostatic chucks for silicon wafers
- develop sputter cathode for magnetic memory application
- declaration and deposition for defendant in a plasma confinement patent infringement (summary judgment in favor of defendant)
- literature search for defendant in licensing action on a materials patent for submicron metallization (successfully found prior art)
- review of opposition experts reports, preparation of expert report, live testimony for holder of a wafer cooling patent in a licensing arbitration hearing (validity of patent and applicability to licensee's equipment upheld)
- advice to counsel for defendant on importance and value to plaintiff's business of a lapsed patent for an ion source apparatus; technical support during mediation
- declarations in support of plaintiffs trade secrets designations for thin film deposition equipment
Areas of Expertise
- Semiconductor manufacturing equipment
- Physical metallurgy
- Thin film properties
- Thin film failure analysis
- Planar and hollow-cathode magnetron sputter source design
- SEMI Standards development and compliance
- Vacuum system design & practice
- Cluster tool design and interfaces
- PVD thin film process
- PVD process control
- Electrostatic chuck technology
- Magnetic modeling
- Ion source technologies
- Arc suppression
- Deposition shielding design
- Engineering management
- High voltage isolation
- Materials Science
- Process development (PVD)
- Project/program management
- Ultra-high vacuum materials and techniques
Curriculum Vitae
-
Larry D. Hartsough, Ph.D., Expert Witness/Consultant
U.S. Patents
- Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
- Apparatus and method for controlling plasma uniformity across a substrate
- Physical Vapor Deposition Reactor Including Magnet to Control Flow of Ions
- Apparatus and Method for Controlling Plasma Uniformity Across a Substrate
- Internally Cooled Target Assembly for Magnetron Sputtering
Publications
- G. C. D'Couto, G. Tkach, K. A. Ashtiani, L. Hartsough, E. Kim, R. Mulpuri, D. B. Lee, K. Levy, and M. Fissel; S. Choi, S.-M. Choi, H.-D. Lee, and H. -K. Kang, "In situ physical vapor deposition of ionized Ti and TiN thin films using hollow cathode magnetron plasma source" J. Vac. Sci. Technol. B 19(1) 244 (2001).
Services Offered
- Unlimited access to the libraries of the University of California, which provide an excellent resource for prior art literature searches
- Clearly written and carefully edited expert reports
- Thoughtful depositions and trial testimony
- Assessment and interpretation of the technology in patents and trade secrets
- Literature reviews focused on relevant case issues
- Advice on technical strengths and weaknesses on both sides of a case
- Coordination of outside services, such as testing, analysis and modeling